ROHM SH8KC6TB1

ROHM · FETs & Power MOSFETs · MPN SH8KC6TB1

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Specifications

Current - Continuous Drain(Id)6.5A
Pd - Power Dissipation2W
RDS(on)25mΩ@10V;33mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)17pF
Number2 N-Channel
Input Capacitance(Ciss)460pF
Gate Charge(Qg)7.6nC@10V;3.9nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)180pF

Technical details

N-Channel Array 60V 6.5A 2W Surface Mount SOP-8

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