ROHM SH8K4TB1

ROHM · FETs & Power MOSFETs · MPN SH8K4TB1

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Specifications

Current - Continuous Drain(Id)9A
RDS(on)24mΩ@4V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)21nC@5V
Operating Temperature-
Output Capacitance(Coss)-

Technical details

9A 24mΩ@4V 2W 2.5V 2 N-Channel SOP-8 FET, MOSFET Arrays RoHS

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