ROHM SH8J66TB1

ROHM · FETs & Power MOSFETs · MPN SH8J66TB1

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Specifications

Current - Continuous Drain(Id)9A
RDS(on)18.5mΩ@4.5V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)400pF
Number2 P-Channel
Input Capacitance(Ciss)3nF
Gate Charge(Qg)35nC@15V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 9A 2W Surface Mount SOP-8

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