ROHM SH8J65TB1

ROHM · FETs & Power MOSFETs · MPN SH8J65TB1

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Specifications

Current - Continuous Drain(Id)7A
RDS(on)21.5mΩ
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)170pF
Number2 P-Channel
Input Capacitance(Ciss)1.2nF
Gate Charge(Qg)18nC@15V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 7A 2W Surface Mount SOP-8

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