ROHM SCT2750NYTB

ROHM · FETs & Power MOSFETs · MPN SCT2750NYTB

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Specifications

Gate Charge(Qg)17nC@500V
Drain to Source Voltage1.7kV
Output Capacitance(Coss)19pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)750mΩ@18V
Number1 N-channel
Input Capacitance(Ciss)275pF

Technical details

1.7kV 6A 4V 57W 750mΩ@18V 1 N-channel TO-268-2 Single FETs, MOSFETs RoHS

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