ROHM SCT2160KEGC11

ROHM · FETs & Power MOSFETs · MPN SCT2160KEGC11

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Specifications

Gate Charge(Qg)62nC@18V
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)22A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation165W
RDS(on)208mΩ@18V
Number1 N-channel
Input Capacitance(Ciss)1.2nF
TypeN-Channel

Technical details

N-Channel 1.2kV 22A 165W Through Hole TO-247N

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