ROHM · FETs & Power MOSFETs · MPN RYC002N05T316
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 50V |
| Current - Continuous Drain(Id) | 200mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 2.2Ω@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 26pF |
50V 200mA 800mV 350mW 2.2Ω@4.5V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS