ROHM · FETs & Power MOSFETs · MPN RV4E031RPHZGTCR1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 4.8nC@5V |
| Current - Continuous Drain(Id) | 3.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 105mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 460pF |
30V 3.1A 2.5V 1.5W 105mΩ@10V 1 P-Channel DFN1616-6W Single FETs, MOSFETs RoHS