ROHM · FETs & Power MOSFETs · MPN RV4C020ZPHZGTCR1
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 2nC@4.5V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 260mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 80pF |
20V 2A 1.3V 1.5W 260mΩ@4.5V 1 P-Channel DFN1616-6W Single FETs, MOSFETs RoHS