ROHM RUQ050N02HZGTR

ROHM · FETs & Power MOSFETs · MPN RUQ050N02HZGTR

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)12nC@4.5V
Current - Continuous Drain(Id)5A
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation950mW
RDS(on)30mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)900pF
TypeN-Channel

Technical details

N-Channel 20V 5A 950mW Surface Mount TSMT6(SC-95)

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