ROHM RUC002N05T116

ROHM · FETs & Power MOSFETs · MPN RUC002N05T116

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage50V
Output Capacitance(Coss)6pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)1.6Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)25pF

Technical details

N-Channel 50V 200mA 350mW Surface Mount SOT-23

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