ROHM RU1E002SPTCL

ROHM · FETs & Power MOSFETs · MPN RU1E002SPTCL

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)1.4Ω@4V
Number1 P-Channel
Input Capacitance(Ciss)30pF
Vgs±20V

Technical details

P-Channel 30V 250mA 200mW Surface Mount SOT-323

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