ROHM RU1C002ZPTCL

ROHM · FETs & Power MOSFETs · MPN RU1C002ZPTCL

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Specifications

Gate Charge(Qg)1.4nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))300mV
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1.2Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)115pF

Technical details

P-Channel 20V 200mA 150mW Surface Mount SOT-323

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