ROHM RTU002P02T106

ROHM · FETs & Power MOSFETs · MPN RTU002P02T106

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)1Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)50pF

Technical details

20V 250mA 200mW 1Ω@4.5V 1 P-Channel UMT-3 Single FETs, MOSFETs RoHS

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