ROHM RT1E050RPTR

ROHM · FETs & Power MOSFETs · MPN RT1E050RPTR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)13nC
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)5A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)26mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.3nF
TypeP-Channel

Technical details

P-Channel TSST-8

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