ROHM RT1E040RPTR

ROHM · FETs & Power MOSFETs · MPN RT1E040RPTR

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.25W
RDS(on)45mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1nF

Technical details

30V 4A 2.5V 1.25W 45mΩ@10V 1 P-Channel TSST-8 Single FETs, MOSFETs RoHS

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