ROHM · FETs & Power MOSFETs · MPN RT1E040RPTR
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 45mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1nF |
30V 4A 2.5V 1.25W 45mΩ@10V 1 P-Channel TSST-8 Single FETs, MOSFETs RoHS