ROHM · FETs & Power MOSFETs · MPN RT1C060UNTR
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| Gate Charge(Qg) | 11nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 28mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 870pF |
20V 6A 1V 1.25W 28mΩ@4.5V 1 N-channel TSST-8 Single FETs, MOSFETs RoHS