ROHM RT1A050ZPTR

ROHM · FETs & Power MOSFETs · MPN RT1A050ZPTR

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Specifications

Gate Charge(Qg)34nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)26mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.8nF
TypeP-Channel

Technical details

P-Channel 12V 5A 1.25W TSST-8

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