ROHM RT1A045APTCR

ROHM · FETs & Power MOSFETs · MPN RT1A045APTCR

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Specifications

Gate Charge(Qg)40nC@4.5V
Drain to Source Voltage12V
Current - Continuous Drain(Id)4.5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.25W
RDS(on)30mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.2nF

Technical details

12V 4.5A 1.25W 30mΩ@4.5V 1 P-Channel TSST-8 Single FETs, MOSFETs RoHS

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