ROHM · FETs & Power MOSFETs · MPN RSR010N10HZGTL
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| Gate Charge(Qg) | 3.5nC@5V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 560mΩ@4V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 140pF |
100V 1A 2.5V 1W 560mΩ@4V 1 N-channel TSMT-3 Single FETs, MOSFETs RoHS