ROHM RSQ020N03TR

ROHM · FETs & Power MOSFETs · MPN RSQ020N03TR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)3.1nC@5V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.25W
RDS(on)134mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)110pF

Technical details

30V 2A 1.25W 134mΩ@10V 1 N-channel TSMT6(SC-95) Single FETs, MOSFETs RoHS

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