ROHM RSQ020N03HZGTR

ROHM · FETs & Power MOSFETs · MPN RSQ020N03HZGTR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)3.1nC@5V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)207mΩ@4V
Number1 N-channel
Input Capacitance(Ciss)110pF
TypeN-Channel

Technical details

30V 2A 2.5V 1.25W 207mΩ@4V 1 N-channel N-Channel SC-95 Single FETs, MOSFETs RoHS

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