ROHM · FETs & Power MOSFETs · MPN RSJ650N10TL
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 260nC@10V |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 9.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.78nF |
100V 65A 2.5V 100W 9.1mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS