ROHM RSJ550N10TL

ROHM · FETs & Power MOSFETs · MPN RSJ550N10TL

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)143nC@50V
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)320pF
RDS(on)13.5mΩ@4V
Number1 N-channel
Input Capacitance(Ciss)6.15nF

Technical details

100V 55A 1V 100W 13.5mΩ@4V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

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