ROHM · FETs & Power MOSFETs · MPN RSJ550N10TL
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 143nC@50V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 320pF |
| RDS(on) | 13.5mΩ@4V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.15nF |
100V 55A 1V 100W 13.5mΩ@4V 1 N-channel TO-263 Single FETs, MOSFETs RoHS