ROHM RS6P100BHTB1

ROHM · FETs & Power MOSFETs · MPN RS6P100BHTB1

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)5.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.88nF

Technical details

N-Channel 100V 100A 104W Surface Mount HSOP-8

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