ROHM RS3E180ATTB1

ROHM · FETs & Power MOSFETs · MPN RS3E180ATTB1

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Specifications

Gate Charge(Qg)160nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)1.01nF
RDS(on)5.4mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.2nF

Technical details

P-Channel 30V 18A 2W Surface Mount SOP-8

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