ROHM RS1P600BHTB1

ROHM · FETs & Power MOSFETs · MPN RS1P600BHTB1

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)8.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.04nF

Technical details

N-Channel 100V 60A 35W Surface Mount HSOP-8

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