ROHM · FETs & Power MOSFETs · MPN RS1N110ATTB1
No reviews yet — be the first to review ROHM RS1N110ATTB1.
| Output Capacitance(Coss) | 310pF |
|---|---|
| Pd - Power Dissipation | 40W |
| Gate Charge(Qg) | 135nC |
| Configuration | - |
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 255pF |
| RDS(on) | 16.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.8nF |
40W 80V 2V 16.3mΩ@10V 1 N-channel N-Channel HSOP-8 Single FETs, MOSFETs RoHS