ROHM RS1G300GNTB

ROHM · FETs & Power MOSFETs · MPN RS1G300GNTB

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)56.8nC@10V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3W;35W
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.23nF

Technical details

40V 30A 1V 2.5mΩ@10V 1 N-channel HSOP-8 Single FETs, MOSFETs RoHS

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