ROHM · FETs & Power MOSFETs · MPN RS1G180MNTB
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| Gate Charge(Qg) | 19.5nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3W;30W |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.293nF |
40V 2.5V 7mΩ@10V 1 N-channel HSOP-8 Single FETs, MOSFETs RoHS