ROHM · FETs & Power MOSFETs · MPN RS1E350BNTB
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| Gate Charge(Qg) | 185nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 35W |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.9nF |
30V 35A 35W 1.7mΩ@10V 1 N-channel HSOP-8 Single FETs, MOSFETs RoHS