ROHM · FETs & Power MOSFETs · MPN RS1E321GNTB1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 42.8nC@10V |
| Current - Continuous Drain(Id) | 32A;80A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 2.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.85nF |
30V 2.5V 3W 2.1mΩ@10V 1 N-channel HSOP-8 Single FETs, MOSFETs RoHS