ROHM · FETs & Power MOSFETs · MPN RS1E320GNTB
No reviews yet — be the first to review ROHM RS1E320GNTB.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 42.8nC@10V |
| Current - Continuous Drain(Id) | 32A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3W;34.6W |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.85nF |
30V 32A 2.5V 1.9mΩ@10V 1 N-channel HSOP-8 Single FETs, MOSFETs RoHS