ROHM RS1E260ATTB1

ROHM · FETs & Power MOSFETs · MPN RS1E260ATTB1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)175nC@10V
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation40W
RDS(on)2.5mΩ@10V;3.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)7.85nF

Technical details

P-Channel 30V 80A 40W Surface Mount HSOP-8

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