ROHM · FETs & Power MOSFETs · MPN RS1E200BNTB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 59nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3W;25W |
| RDS(on) | 3.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.1nF |
30V 20A 2.5V 3.9mΩ@10V 1 N-channel HSOP-8 Single FETs, MOSFETs RoHS