ROHM RS1E180BNTB

ROHM · FETs & Power MOSFETs · MPN RS1E180BNTB

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF
TypeN-Channel

Technical details

30V 60A 2.5V 25W 4.9mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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