ROHM RS1E170GNTB

ROHM · FETs & Power MOSFETs · MPN RS1E170GNTB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@10V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation23W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)10.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)720pF

Technical details

30V 40A 2.5V 23W 10.3mΩ@4.5V 1 N-channel HSOP-8 Single FETs, MOSFETs RoHS

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