ROHM RS1E150GNTB

ROHM · FETs & Power MOSFETs · MPN RS1E150GNTB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10nC@10V
Current - Continuous Drain(Id)15A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3W;22.9W
RDS(on)8.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)590pF

Technical details

30V 15A 2.5V 8.8mΩ@10V 1 N-channel HSOP-8 Single FETs, MOSFETs RoHS

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