ROHM · FETs & Power MOSFETs · MPN RQ7G080BGTCR
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| Gate Charge(Qg) | 10.6nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.1W |
| RDS(on) | 16.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 530pF |
40V 8A 2.5V 1.1W 16.5mΩ@10V 1 N-channel TSMT-8 Single FETs, MOSFETs RoHS