ROHM RQ7G080ATTCR

ROHM · FETs & Power MOSFETs · MPN RQ7G080ATTCR

No reviews yet — be the first to review ROHM RQ7G080ATTCR.

Specifications

Gate Charge(Qg)37nC@10V;18nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)185pF
RDS(on)14.7mΩ@10V;18.1mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.06nF

Technical details

P-Channel 40V 8A 1.1W Surface Mount TSMT-8

Related FETs & Power MOSFETs