ROHM RQ7E110AJTCR

ROHM · FETs & Power MOSFETs · MPN RQ7E110AJTCR

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Specifications

Gate Charge(Qg)22nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.5W
RDS(on)9mΩ@11V
Number1 N-channel
Input Capacitance(Ciss)2.41nF

Technical details

N-Channel 30V 11A 1.5W Surface Mount TSMT8

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