ROHM RQ7E100ATTCR

ROHM · FETs & Power MOSFETs · MPN RQ7E100ATTCR

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Specifications

Gate Charge(Qg)53nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.1W
RDS(on)11.2mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.37nF

Technical details

30V 10A 2.5V 1.1W 11.2mΩ@10V 1 P-Channel TSMT8 Single FETs, MOSFETs RoHS

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