ROHM RQ7E055ATTCR

ROHM · FETs & Power MOSFETs · MPN RQ7E055ATTCR

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Specifications

Gate Charge(Qg)18.8nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.5W
RDS(on)24.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)860pF

Technical details

30V 5.5A 2.5V 1.5W 24.5mΩ@10V 1 P-Channel TSMT8 Single FETs, MOSFETs RoHS

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