ROHM RQ6G050ATTCR

ROHM · FETs & Power MOSFETs · MPN RQ6G050ATTCR

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)5A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation950mW
RDS(on)40mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.1nF
TypeP-Channel

Technical details

P-Channel 40V 5A 950mW Surface Mount SC-95

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