ROHM RQ6E085BNTCR

ROHM · FETs & Power MOSFETs · MPN RQ6E085BNTCR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)32.7nC@10V
Current - Continuous Drain(Id)8.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)14.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.35nF

Technical details

N-Channel 30V 8.5A 1.25W Surface Mount SC-95

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