ROHM RQ6E055BNTCR

ROHM · FETs & Power MOSFETs · MPN RQ6E055BNTCR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.6nC@10V
Current - Continuous Drain(Id)5.5A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.25W
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)355pF

Technical details

30V 5.5A 2.5V 1.25W 25mΩ@10V 1 N-channel TSMT6(SC-95) Single FETs, MOSFETs RoHS

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