ROHM RQ6E050AJTCR

ROHM · FETs & Power MOSFETs · MPN RQ6E050AJTCR

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Specifications

Output Capacitance(Coss)60pF
Pd - Power Dissipation950mW
Configuration-
Gate Charge(Qg)4.7nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)35mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)520pF

Technical details

950mW 30V 5A 1.5V 35mΩ@4.5V 1 N-channel N-Channel TSMT6(SC-95) Single FETs, MOSFETs RoHS

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