ROHM · FETs & Power MOSFETs · MPN RQ6E040XNTCR
No reviews yet — be the first to review ROHM RQ6E040XNTCR.
| Gate Charge(Qg) | 3.3nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 950mW |
| RDS(on) | 50mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 180pF |
30V 4A 2.5V 950mW 50mΩ@10V 1 N-channel TSMT6(SC-95) Single FETs, MOSFETs RoHS