ROHM RQ6E030SPTR

ROHM · FETs & Power MOSFETs · MPN RQ6E030SPTR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6nC@5V
Current - Continuous Drain(Id)3A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation950mW
RDS(on)80mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)440pF

Technical details

30V 3A 2.5V 950mW 80mΩ@10V 1 P-Channel TSMT6(SC-95) Single FETs, MOSFETs RoHS

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