ROHM RQ6E030ATTCR

ROHM · FETs & Power MOSFETs · MPN RQ6E030ATTCR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)5.4nC@10V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)91mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)240pF

Technical details

P-Channel 30V 3A 1.25W Surface Mount SOT-23-6

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